2SC6026MFV Toshiba Semiconductor, 2SC6026MFV Datasheet - Page 2

• Manufacturer Part Number: 2SC6026MFV
• Description: Transistor Silicon NPN Epitaxial Type
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Marking
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Note: h
( ) marking symbol
FE
Characteristic
classification Y (Y): 120~240, GR (G): 200~400
HY
Type Name
h
FE
Classification
(Ta = 25°C)
h
V
FE
Symbol
CE (sat)
I
I
C
CBO
EBO
(Note)
f
T
ob
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
= 100 mA, I
= 5 V, I
= 60 V, I
= 6 V, I
= 10 V, I
= 10 V, I
2
C
C
Test Condition
E
C
E
= 0
= 2 mA
B
= 0
= 0, f = 1 MHz
= 1 mA
= 10 mA
Min
120
⎯
⎯
⎯
60
⎯
Typ.
0.95
2SC6026MFV
0.1
⎯
⎯
⎯
⎯
2005-06-28
Max
0.25
400
0.1
0.1
⎯
3
MHz
Unit
µA
µA
pF
⎯
V