BUP307D Siemens Semiconductor Group, BUP307D Datasheet - Page 2

• Manufacturer Part Number: BUP307D
• Description: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
Electrical Characteristics, at T
Parameter
Static Characteristics
Gate threshold voltage
V
Collector-emitter saturation voltage
V
V
V
V
V
Gate-emitter leakage current
V
AC Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Zero gate voltage collector current
GE
GE
GE
GE
GE
CE
GE
CE
CE
CE
CE
= 1200 V, V
= 20 V, I
= 25 V, V
= 25 V, V
= 25 V, V
= V
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 25 V, V
CE,
I
C
C
C
C
C
C
GE
GE
GE
CE
= 0.35 mA, T
= 15 A
= 25 A, T
= 25 A, T
= 42 A, T
= 42 A, T
GE
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, T
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
j
j
= 25 °C
= 25 °C
j
= 25 °C, unless otherwise specified
Symbol
V
V
I
I
g
C
C
C
2
CES
GES
fs
GE(th)
CE(sat)
iss
oss
rss
-
-
Symbol
R
R
thJC
thJC
min.
-
-
-
-
-
-
-
-
-
4.5
5.5
D
Values
typ.
-
-
5.5
2.7
3.3
3.4
4.3
8
2000
160
65
55 / 150 / 56
Values
E
0.42
1.25
max.
-
-
-
6.5
3.2
3.9
0.5
100
2700
240
100
BUP 307D
Dec-02-1996
Unit
-
K/W
Unit
V
mA
nA
S
pF