BUP410D Siemens Semiconductor Group, BUP410D Datasheet - Page 8

• Manufacturer Part Number: BUP410D
• Description: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
• Manufacturer: Siemens Semiconductor Group

I
Typ. gate charge
V
parameter: I
Short circuit safe operating area
I
Semiconductor Group
Csc
parameter: V
Csc
V
GE
GE
/ I
C(90°C)
= f ( V
= ( Q
20
16
14
12
10
10
V
8
6
4
2
0
6
4
2
0
0
0
CE
Gate
100
C puls
) , T
GE
4
)
= ± 15 V, t
j
200
= 150°C
= 6 A
8
300
100 V
12
400
sc
10 µs, L < 50 nH
500
16
600
20
300 V
Q
V
V
Gate
CE
800
26
8
Typ. capacitances
C = f ( V
Reverse biased safe operating area
I
I
parameter: V
Cpuls
parameter: V
Cpuls
C
/ I
C
10
10
10
10
nF
= f (V
2.5
1.5
1.0
0.5
0.0
-1
-2
1
0
CE
0
0
)
CE
100
5
GE
GE
) , T
= 15 V
200
= 0 V, f = 1 MHz
10
j
= 150°C
300
15
400
20
500
25
600
30
BUP 410D
Dec-12-1996
V
V
V
V
CE
CE
Ciss
Coss
Crss
800
40