BUL1688L SI Semiconductors, BUL1688L Datasheet
BUL1688L
Manufacturer Part Number
BUL1688L
Description
NPN Silicon Power Transistor
Manufacturer
SI Semiconductors
Datasheet
1.BUL1688L.pdf
(3 pages)
SI SEMICONDUCTORS CO.,LTD
●
●
●
●
Si semiconductors
Collector-Emitter Voltage
NPN SILICON POWER
Total Power Dissipation
Collector-Base Voltage
Junction Temperature
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Voltage
Storage Temperature
FEATURES
MAXIMUM RATINGS（Tc=25°C） SOT-82
ELECTRICAL CHARACTERISTICS（Tc=25°C）
APPLICATIONS:
■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■SWITCH MODE POWER SUPPLIES
CHARACTERISTIC
Collector Current
Sustaining Voltage
Sustaining Voltage
Saturation Voltage
Saturation Voltage
Collector-Emitter
Collector-Emitter
DC Current Gain
PARAMETER
Base-Emitter
Base-Emitter
:
■HIGH SWITCHING SPEED ■WIDE SOA
SUITABLE FOR 110V CIRCUIT MODE: ■COMPACT FLUORESCENT LAMP
SYMBOL
V
V
V
SYMBOL
Tstg
P
CBO
CEO
Tj
EBO
I
Vces
Vbes
V
V
TRANSISTOR
C
I
I
.
C
h
CBO
CEO
CEO
EBO
FE
-65-150
VALUE
V
TEST CONDITION
I
I
I
I
150
V
400
250
8.0
V
C
C
C
C
60
CE
I
V
9
CE
C
I
=1.0A,I
=2.0A,I
=5.0A,I
=2.0A,I
CE
E
CE
=10mA,I
V
=5V,I
1
=1mA,I
=5V,I
=250V,I
CB
=5V,I
=400V
C
C
B
B
B
B
=10mA
C
=1.0A
=0.2A
=0.4A
=1.0A
=0.4A
UNIT
C
=5A
°C
°C
W
B
V
V
V
A
=0
B
=0
=0
250
MIN
10
9
8
5
Product specification
1- E、2-C、3- B
SOT-82
MAX
100
250
0.5
0.7
1.5
1.5
40
BUL1688L
2002.08
UNIT
μA
μA
V
V
V
V
Related parts for BUL1688L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
BUL Series Transistors
Manufacturer:
SI Semiconductors
Datasheet:
Part Number:
Description:
Bul Series Transistors
Manufacturer:
SI Semiconductors
Datasheet:
Part Number:
Description:
Transistors
Manufacturer:
SI Semiconductors
Datasheet:
Part Number:
Description:
Low Voltage Series Transistors
Manufacturer:
SI Semiconductors
Datasheet:
Part Number:
Description:
Si Photodiode
Manufacturer:
Hamamatsu Photonics, K.K.,
Datasheet:
Part Number:
Description:
Si Pin Photodiode Large Area Sensors For Scintillation Detection
Manufacturer:
Hamamatsu Photonics, K.K.,
Datasheet:
Part Number:
Description:
Si Pin Photodiode
Manufacturer:
Hamamatsu Photonics, K.K.,
Datasheet:
Part Number:
Description:
Si Pin Photodiode
Manufacturer:
Hamamatsu Photonics, K.K.,
Datasheet:
Part Number:
Description:
Si Photodiode Spectral Response Like Human Eye
Manufacturer:
Hamamatsu Photonics, K.K.,
Datasheet:
Part Number:
Description:
Si Apd
Manufacturer:
Hamamatsu Photonics, K.K.,
Datasheet:
Part Number:
Description:
Si Photodiode With Preamp
Manufacturer:
Hamamatsu Photonics, K.K.,
Datasheet:
Part Number:
Description:
Si Photodiode With Preamp
Manufacturer:
Hamamatsu Photonics, K.K.,
Datasheet:
Part Number:
Description:
Si-PIN-Fotodiode mit Tageslichtsperrfilter
Manufacturer:
OSRAM [OSRAM GmbH]
Datasheet:
Part Number:
Description:
Si PIN photodiode Dual-element, plastic package photodiode
Manufacturer:
HAMAMATSU [Hamamatsu Corporation]
Datasheet:
Part Number:
Description:
Si PIN photodiode Large area sensors for scintillation detection
Manufacturer:
HAMAMATSU [Hamamatsu Corporation]
Datasheet:
BUL1688L Summary of contents
Page 1
... CEO =10mA,I =0 CEO =1mA,I =0 EBO =1.0A,I =0. =2.0A,I =0. =5.0A,I =1. =2.0A,I =0. =5V,I =10mA =5V,I =1. =5V,I = Product specification BUL1688L SOT-82 1- E、2-C、3- B MIN MAX UNIT 100 μA 250 μA 250 0.5 V 0.7 1.5 1 2002.08 ...
Page 2
... Vcesat-Ic Vcesat( Tj=125℃ 0 0.01 0 semiconductors % 120 100 Vce(v) 0 100 1000 hFE 100 Vce=1.5V Tj=125℃ 10 Tj=25℃ 1 0.001 1 10 Vbesat(v) 1.6 1.4 1.2 1 0.8 Tj=25℃ 0.6 0.4 Ic(A) 10 0.1 BUL1688L Pc∝Tj Is/s Ptot Tj(℃) 50 100 hFE-Ic Vce=5V Ic(A) 0.01 0.1 1 Vbesat-Ic Tj=25℃ Tj=125℃ Ic(A) 1 2002.08 150 10 10 ...
Page 3
... SI SEMICONDUCTORS CO.,LTD SYMBOL semiconductors . SOT-82 MECHANICAL DATA min 7.4 10.5 0.7 0.49 2.4 1.0 15.4 4.15 2 Product specification nom max 7.8 10.8 0.9 0.75 2.7 1.3 16 2.2 4.65 3.8 2.54 2.15 UNIT：mm 2002.08 ...