BUL52 Seme LAB, BUL52 Datasheet
BUL52
Manufacturer Part Number
BUL52
Description
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Manufacturer
Seme LAB
Datasheet
1.BUL52.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
LAB
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
V
V
V
I
I
I
P
T
Semelab plc.
SEME
C
C(PK)
B
stg
CBO
CEO
EBO
tot
Pin 1 – Base
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1 2 3
2.54
Collector – Base Voltage
Collector – Emitter Voltage (I
Emitter – Base Voltage (I
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
Operating and Storage Temperature Range
10.2
Pin 2 – Collector
2.54
TO220
0.85
1.3
3.6 Dia.
1.3
Pin 3 – Emitter
case
4.5
C
(T
= 25°C
= 0)
0.5
case
B
= 0)
= 25°C unless otherwise stated)
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• MILITARY AND HI–REL VERSIONS
FEATURES
• Multi–base for efficient energy distribution
• Ion implant and high accuracy masking for
• Triple Guard Rings for improved control of
DISTRIBUTED BASE DESIGN
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
tight control of characteristics from batch to
batch.
high voltages.
electronic ballast applications
HIGH SPEED NPN
HIGH VOLTAGE
Designed for use in
ADVANCED
–55 to +150°C
100W
800V
400V
10V
12A
8A
4A
BUL52B
Prelim. 3/95
Related parts for BUL52
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
METAL GATE RF SILICON FET
Manufacturer:
SEME-LAB [Seme LAB]
Datasheet:
Part Number:
Description:
METAL GATE RF SILICON FET
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
METAL GATE RF SILICON FET
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
POWER TRANSISTORS NPN SILICON
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
PNP/ LOW NOISE AMPLIFIER TRANSISTOR
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
Bipolar NPN Device
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
Bipolar PNP Device
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
PNP SILICON EPITAXIAL TRANSISTOR
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
Bipolar NPN Device
Manufacturer:
Seme LAB
Datasheet:
Part Number:
Description:
NPN POWER TRANSISTOR
Manufacturer:
Seme LAB
Datasheet:
BUL52 Summary of contents
Page 1
... Triple Guard Rings for improved control of high voltages 25°C unless otherwise stated) case = 25°C case BUL52B ADVANCED HIGH VOLTAGE Designed for use in 800V 400V 10V 8A 12A 4A 100W –55 to +150°C Prelim. 3/95 ...
Page 2
... 20V f = 1MHz CB BUL52B Min. Typ. Max. Unit 400 800 100 100 100 — 0.05 0.1 0.1 0.2 V 0.15 0.3 0.3 0.5 0.8 1.0 0.9 1.1 V 0.95 1.2 20 MHz 40 pF ...