BUL53A Seme LAB, BUL53A Datasheet
BUL53A
Manufacturer Part Number
BUL53A
Description
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Manufacturer
Seme LAB
Datasheet
1.BUL53A.pdf
(2 pages)
LAB
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
V
V
V
I
I
I
P
T
Semelab plc.
SEME
C
C(PK)
B
stg
CBO
CEO
EBO
tot
Pin 1 – Base
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1 2 3
2.54
Collector – Base Voltage(I
Collector – Emitter Voltage (I
Emitter – Base Voltage (I
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
Operating and Storage Temperature Range
10.2
Pin 2 – Collector
2.54
TO220
0.85
1.3
3.6 Dia.
1.3
Pin 3 – Emitter
case
4.5
C
(T
= 25°C
E
= 0)
0.5
case
=0)
B
= 0)
= 25°C unless otherwise stated)
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
FEATURES
• Multi–base for efficient energy distribution
• Ion implant and high accuracy masking for
• Triple Guard Rings for improved control of
DISTRIBUTED BASE DESIGN
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
tight control of characteristics from batch to
batch.
high voltages.
electronic ballast applications
HIGH SPEED NPN
HIGH VOLTAGE
Designed for use in
ADVANCED
–55 to +150°C
600V
300V
90W
10V
10A
18A
3A
BUL53A
Prelim. 2/97
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BUL53A Summary of contents
Page 1
... Triple Guard Rings for improved control of high voltages 25°C unless otherwise stated) case = 25°C case BUL53A ADVANCED HIGH VOLTAGE Designed for use in 600V 300V 10V 10A 18A 3A 90W –55 to +150°C Prelim. 2/97 ...
Page 2
... 20V f = 1MHz CB BUL53A Min. Typ. Max. Unit 300 600 100 100 100 — 0.07 0.1 0.2 0.5 V 0.4 0.8 0.9 1.2 V 1.1 1.4 20 MHz 62 pF ...