BUL53B Seme LAB, BUL53B Datasheet
BUL53B
Manufacturer Part Number
BUL53B
Description
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Manufacturer
Seme LAB
Datasheet
1.BUL53B.pdf
(2 pages)
LAB
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
V
V
V
I
I
I
P
T
Semelab plc.
SEME
C
C(PK)
B
stg
CBO
CEO
EBO
tot
Pin 1 – Base
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1 2 3
2.54
Collector – Base Voltage(I
Collector – Emitter Voltage (I
Emitter – Base Voltage (I
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
Operating and Storage Temperature Range
10.2
Pin 2 – Collector
2.54
TO220
0.85
1.3
3.6 Dia.
1.3
Pin 3 – Emitter
case
4.5
C
(T
= 25°C
E
= 0)
0.5
case
=0)
B
= 0)
= 25°C unless otherwise stated)
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
FEATURES
• Multi–base for efficient energy distribution
• Ion implant and high accuracy masking for
• Triple Guard Rings for improved control of
DISTRIBUTED BASE DESIGN
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
tight control of characteristics from batch to
batch.
high voltages.
electronic ballast applications
HIGH SPEED NPN
HIGH VOLTAGE
Designed for use in
ADVANCED
–55 to +150°C
500V
250V
90W
10V
12A
24A
4A
BUL53B
Prelim. 2/97
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BUL53B Summary of contents
Page 1
... Triple Guard Rings for improved control of high voltages 25°C unless otherwise stated) case = 25°C case BUL53B ADVANCED HIGH VOLTAGE Designed for use in 500V 250V 10V 12A 24A 4A 90W –55 to +150°C Prelim. 2/97 ...
Page 2
... 10V f = 1MHz CB BUL53B Min. Typ. Max. Unit 250 500 100 100 100 — 0.07 0.1 0.2 0.5 V 0.4 0.8 0.9 1.2 V 1.1 1.4 20 MHz 60 pF ...