BUL54AFI Seme LAB, BUL54AFI Datasheet
BUL54AFI
Manufacturer Part Number
BUL54AFI
Description
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Manufacturer
Seme LAB
Datasheet
1.BUL54AFI.pdf
(2 pages)
LAB
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
V
V
V
I
I
I
P
T
Semelab plc.
SEME
C
C(PK)
B
stg
CBO
CEO
EBO
tot
Pin 1 – Base
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
ISOLATED TO220
Collector – Base Voltage
Collector – Emitter Voltage (I
Emitter – Base Voltage (I
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
Operating and Storage Temperature Range
Pin 2 – Collector
1 2 3
2.54 2.54
10.2
0.85
1.3
3.6 Dia.
Pin 3 – Emitter
case
C
(T
= 25°C
= 0)
case
B
= 0)
= 25°C unless otherwise stated)
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• MILITARY AND HI–REL VERSIONS
FEATURES
• Multi–base for efficient energy distribution
• Ion implant and high accuracy masking for
• Triple Guard Rings for improved control of
DISTRIBUTED BASE DESIGN
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
tight control of characteristics from batch to
batch.
high voltages.
electronic ballast applications
HIGH SPEED NPN
HIGH VOLTAGE
Designed for use in
ADVANCED
–55 to +150°C
1000V
500V
30W
10V
4A
7A
2A
BUL54AFI
Prelim. 3/95
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BUL54AFI Summary of contents
Page 1
... Triple Guard Rings for improved control of high voltages 25°C unless otherwise stated) case = 25°C case BUL54AFI ADVANCED HIGH VOLTAGE HIGH SPEED NPN Designed for use in electronic ballast applications 1000V 500V 10V 30W – ...
Page 2
... 100mA I = 20mA 20V f = 1MHz CB BUL54AFI Min. Typ. Max. Unit 500 1000 100 100 100 — 0.05 0.1 0.15 0.2 V 0.3 0.5 0.8 1.0 V 0.9 1.1 20 MHz 20 pF Prelim. 3/95 ...