BUL54ASMD Seme LAB, BUL54ASMD Datasheet
BUL54ASMD
Manufacturer Part Number
BUL54ASMD
Description
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Manufacturer
Seme LAB
Datasheet
1.BUL54ASMD.pdf
(2 pages)
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
V
V
V
I
I
I
P
T
R
Semelab plc.
C
C(PK)
B
stg
CBO
CEO
EBO
tot
th
Pad 1 – Base
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
Collector – Base Voltage
Collector – Emitter Voltage (I
Emitter – Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
Derate above 25°C when used on efficient heatsink
Operating and Storage Temperature Range
Thermal Resistance Junction – Case
SMD1 Package
Pad 2 – Collector
sales@semelab.co.uk
Pad 3 – Emitter
case
Website:
(T
= 25°C
case
B
= 0)
http://www.semelab.co.uk
= 25°C unless otherwise stated)
FEATURES
• Multi–base design for efficient energy
• Ion implant and high accuracy masking for
• Triple Guard Rings for improved control of
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING (t
• EXCEPTIONAL HIGH TEMPERATURE
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL OPTIONS
distribution across the chip resulting in
significantly improved switching and energy
ratings across full temperature range.
tight control of characteristics from batch to
batch.
high voltages.
PERFORMANCE
DISTRIBUTED BASE DESIGN
HIGH SPEED NPN
HIGH VOLTAGE
ADVANCED
f
= 40ns)
–65 to 200°C
BUL54ASMD
0.2W/°C
3.5°C/W
1000V
500V
0.8A
35W
10V
2A
4A
Prelim. 7/00
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BUL54ASMD Summary of contents
Page 1
... Triple Guard Rings for improved control of high voltages 25°C unless otherwise stated) case = 25°C case Website: http://www.semelab.co.uk BUL54ASMD ADVANCED HIGH VOLTAGE = 40ns) f 1000V 500V 10V 2A 4A 0.8A 35W 0.2W/°C –65 to 200°C 3.5° ...
Page 2
... 100 10MHz V = 20V f = 1MHz 50V 150V 0. –0. Website: http://www.semelab.co.uk BUL54ASMD Min. Typ. Max. Unit 500 1000 V 10 100 100 100 — 0.05 0.1 0.15 0.2 V 0.3 ...