BUL55A Seme LAB, BUL55A Datasheet
BUL55A
Manufacturer Part Number
BUL55A
Description
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Manufacturer
Seme LAB
Datasheet
1.BUL55A.pdf
(2 pages)
LAB
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
V
V
V
I
I
I
P
T
Semelab plc.
SEME
C
C(PK)
B
stg
CBO
CEO
EBO
tot
Pin 1 – Base
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1 2 3
2.54
Collector – Base Voltage(I
Collector – Emitter Voltage (I
Emitter – Base Voltage (I
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
Operating and Storage Temperature Range
10.2
Pin 2 – Collector
2.54
TO220
0.85
1.3
3.6 Dia.
1.3
Pin 3 – Emitter
case
4.5
C
(T
= 25°C
E
= 0)
0.5
case
=0)
B
= 0)
= 25°C unless otherwise stated)
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
FEATURES
• Multi–base for efficient energy distribution
• Ion implant and high accuracy masking for
• Triple Guard Rings for improved control of
DISTRIBUTED BASE DESIGN
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
tight control of characteristics from batch to
batch.
high voltages.
electronic ballast applications
HIGH SPEED NPN
HIGH VOLTAGE
Designed for use in
ADVANCED
–55 to +150°C
600V
300V
55W
10V
12A
7A
2A
BUL55A
Prelim. 2/97
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BUL55A Summary of contents
Page 1
... Triple Guard Rings for improved control of high voltages 25°C unless otherwise stated) case = 25°C case BUL55A ADVANCED HIGH VOLTAGE Designed for use in 600V 300V 10V 7A 12A 2A 55W –55 to +150°C Prelim. 2/97 ...
Page 2
... 10V f = 1MHz CB BUL55A Min. Typ. Max. Unit 300 600 100 100 100 — 0.07 0.1 0.2 0.5 V 0.4 0.8 0.9 1.1 V 1.1 1.2 20 MHz 30 pF ...