BUL56A Seme LAB, BUL56A Datasheet
BUL56A
Manufacturer Part Number
BUL56A
Description
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Manufacturer
Seme LAB
Datasheet
1.BUL56A.pdf
(2 pages)
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LAB
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
V
V
V
I
I
I
P
T
Semelab plc.
SEME
C
C(PK)
B
stg
CBO
CEO
EBO
tot
Pin 1 – Base
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1 2 3
2.54
Collector – Base Voltage(I
Collector – Emitter Voltage (I
Emitter – Base Voltage (I
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
Operating and Storage Temperature Range
10.2
Pin 2 – Collector
2.54
TO220
0.85
1.3
3.6 Dia.
1.3
Pin 3 – Emitter
case
4.5
C
(T
= 25°C
E
= 0)
0.5
case
=0)
B
= 0)
= 25°C unless otherwise stated)
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
FEATURES
• Multi–base for efficient energy distribution
• Ion implant and high accuracy masking for
• Triple Guard Rings for improved control of
DISTRIBUTED BASE DESIGN
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
tight control of characteristics from batch to
batch.
high voltages.
electronic ballast applications
HIGH SPEED NPN
HIGH VOLTAGE
Designed for use in
ADVANCED
–55 to +150°C
350V
160V
85W
10V
16A
22A
5A
BUL56A
Prelim. 2/97
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BUL56A Summary of contents
Page 1
... Triple Guard Rings for improved control of high voltages 25°C unless otherwise stated) case = 25°C case BUL56A ADVANCED HIGH VOLTAGE Designed for use in 350V 160V 10V 16A 22A 5A 85W –55 to +150°C Prelim. 2/97 ...
Page 2
... 0. 0. 10A 10A 10V f = 1MHz CB BUL56A Min. Typ. Max. Unit 160 350 100 100 100 — 5 0.07 0.2 0.2 0.6 V 0.6 1.2 0.95 1.2 V 1.2 1.8 20 MHz 75 pF Prelim. 2/97 ...