BUL56B Seme LAB, BUL56B Datasheet
BUL56B
Manufacturer Part Number
BUL56B
Description
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Manufacturer
Seme LAB
Datasheet
1.BUL56B.pdf
(2 pages)
LAB
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
V
V
V
I
I
I
P
T
Semelab plc.
SEME
C
C(PK)
B
stg
CBO
CEO
EBO
tot
Pin 1 – Base
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1 2 3
2.54
Collector – Base Voltage(I
Collector – Emitter Voltage (I
Emitter – Base Voltage (I
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
Operating and Storage Temperature Range
10.2
Pad 2 – Collector
2.54
TO220
0.85
1.3
3.6 Dia.
Pad 3 – Emitter
1.3
case
4.5
C
(T
= 25°C
E
= 0)
0.5
case
=0)
B
= 0)
= 25°C unless otherwise stated)
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
FEATURES
• Multi–base for efficient energy distribution
• Ion implant and high accuracy masking for
• Triple Guard Rings for improved control of
DISTRIBUTED BASE DESIGN
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
tight control of characteristics from batch to
batch.
high voltages.
electronic ballast applications
HIGH SPEED NPN
HIGH VOLTAGE
Designed for use in
ADVANCED
–55 to +150°C
250V
100V
85W
10V
18A
25A
5A
BUL56B
Prelim. 2/97
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BUL56B Summary of contents
Page 1
... Triple Guard Rings for improved control of high voltages 25°C unless otherwise stated) case = 25°C case BUL56B ADVANCED HIGH VOLTAGE Designed for use in 250V 100V 10V 18A 25A 5A 85W –55 to +150°C Prelim. 2/97 ...
Page 2
... 0. 0. 12A 12A 10V f = 1MHz CB BUL56B Min. Typ. Max. Unit 100 250 100 100 100 — 5 0.07 0.2 0.2 0.6 V 0.6 1.2 0.95 1.2 V 1.2 1.8 20 MHz 100 pF Prelim. 2/97 ...