BULD50KC Power Innovations Limited, BULD50KC Datasheet - Page 4

• Manufacturer Part Number: BULD50KC
• Description: NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• Manufacturer: Power Innovations Limited

BULD50KC, BULD50SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
FEBRUARY 1994 - REVISED SEPTEMBER 1997
P R O D U C T
4
0·01
1·0
0·1
10
1·0
BULD50KC
T
t
t
t
DC Operation
p
p
p
C
= 100 µs
=
= 10 ms
= 25°C
MAXIMUM FORWARD-BIAS
V
1 ms
SAFE OPERATING AREA
CE
- Collector-Emitter Voltage - V
10
I N F O R M A T I O N
Figure 4.
MAXIMUM SAFE OPERATING REGIONS
8
6
4
2
0
100
0
100
V
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
LDX50CFB
CE
200
- Collector-Emitter Voltage - V
1000
300
Figure 6.
400
0·01
1·0
0·1
500
10
1·0
BULD50SL
T
t
t
t
I
V
T
p
p
p
B(on)
600
A
A
BE(off)
= 25°C
= 100 µs
= 10 ms
=
MAXIMUM FORWARD-BIAS
= I
= 25°C
V
= -5 V
1 s
700
LDX50SRB
SAFE OPERATING AREA
CE
C
- Collector-Emitter Voltage - V
/ 5
800
10
Figure 5.
100
LDX50SFB
1000