STD100NH02L ST Microelectronics, STD100NH02L Datasheet
STD100NH02L
Manufacturer Part Number
STD100NH02L
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD100NH02LT4
Manufacturer:
ST
Quantity:
20 000
DESCRIPTION
The STD100NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
September 2003
STD100NH02L
TYPICAL R
TYPICAL R
R
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Symbol
V
E
DS(ON)
V
I
spike(1)
DM (3)
V
I
I
V
P
AS (4)
T
D (2)
D (2)
DGR
T
GS
stg
DS
TYPE
tot
j
* Qg INDUSTRY’s BENCHMARK
Drain-source Voltage Rating
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
DS
(on) = 0.0042
(on) = 0.005
V
24 V
DSS
N-CHANNEL 24V - 0.0042
Parameter
< 0.0048
R
DS(on)
@ 5 V
C
GS
@ 10 V
= 25°C
GS
= 20 k )
= 0)
C
C
60 A
= 25°C
= 100°C
I
D
(2)
STripFET™ III POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(Suffix “-1”)
TO-251
IPAK
-55 to 175
Value
± 20
0.67
240
100
800
30
24
24
60
60
STD100NH02L
1
2
- 60A DPAK/IPAK
3
(Suffix “T4”)
TO-252
DPAK
1
W/°C
Unit
mJ
3
°C
W
V
V
V
V
A
A
A
1/12
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