STD10NF06L ST Microelectronics, STD10NF06L Datasheet - Page 3

• Manufacturer Part Number: STD10NF06L
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
I
V
SDM
t
I
t
SD
d(on)
Q
Q
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off-Delay Time
Fall Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 10A, V
= 10A, di/dt = 100A/µs,
= 30V, I
= 48V, I
= 5V
= 20V, T
= 30V, I
Test Conditions
Test Conditions
Test Conditions
V
V
D
D
D
GS
GS
j
GS
= 5A
= 10A,
= 150°C
= 5A,
= 4.5V
= 0
= 4.5V
Min.
Min.
Min.
Typ.
Typ.
Typ.
2.5
10
50
20
10
30
50
6
3
3
STD10NF06L
Max.
Max.
Max.
1.3
10
40
8
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/7