STD12N06 ST Microelectronics, STD12N06 Datasheet - Page 2

• Manufacturer Part Number: STD12N06
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: ST Microelectronics

STD12N05/STD12N06
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/10
V
Symbol
Symbol
Symbol
Symbol
R
R
R
R
V
g
(BR)DSS
I
thj-case
t hc-sink
C
thj-amb
I
I
C
E
E
DS(on)
C
GS(th)
D(on)
fs
I
I
DS S
GSS
T
A R
A R
oss
AS
AR
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
DS
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
AR
Parameter
max,
max,
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 10 V
= 25 V
= Max Rating
= Max Rating x 0.8 T
=
= 10V I
> I
> I
case
DD
D(on)
D(on)
GS
< 1%)
< 1%)
= 25 V)
20 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
j
D
D
f = 1 MHz
max,
V
= 250 A
o
= 6 A
DS(on)max
DS(on)max
C unless otherwise specified)
GS
for STD12N05
for STD12N06
= 0
< 1%)
Max
Max
Typ
V
c
GS
I
= 125
D
= 6 A
= 0
o
C
Min.
Min.
Min.
50
60
12
2
3
3.33
100
275
Max Value
1.5
Typ.
Typ.
Typ.
330
150
2.9
0.1
40
12
30
7
8
5
Max.
Max.
Max.
0.15
450
250
10
60
100
1
4
Unit
Unit
Unit
o
o
o
Unit
nA
pF
pF
pF
C/W
C/W
C/W
mJ
mJ
o
V
V
V
A
S
A
A
A
A
C