STD12N10L ST Microelectronics, STD12N10L Datasheet
STD12N10L
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STD12N10L Summary of contents
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... Max. Operating Junction Temperature Pulse width limited by safe operating area November 1999 INTERNAL SCHEMATIC DIAGRAM = 100 STD12N10L - 12A TO-252 3 1 DPAK TO-252 (Suffix ”T4”) Value Unit 100 V 100 ...
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... STD12N10L THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature F or Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbo l Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage ...
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... G GS (Induct ive Load, see fig. 5) Test Con ditions di/dt = 100 150 (see test circuit, fig. 5) STD12N10L Min. Typ. Max. Unit Min. Typ. Max. Unit ...
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... STD12N10L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... H 9.35 L2 0.8 L4 0.6 H DETAIL ”A” MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 DETAIL ”A” L4 STD12N10L inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.031 0.039 0068772-B 5/9 ...
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... STD12N10L Information furnished is believed to be accurate and reliable. However, STMicroelect r onics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice ...