STD150NH02L ST Microelectronics, STD150NH02L Datasheet - Page 3

• Manufacturer Part Number: STD150NH02L
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: ST Microelectronics

STD150NH02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1)
(2)
(
.
3
) Starting T
Garanted when external Rg=4.7
Pulse width limited by safe operating area
.
Symbol
Symbol
Symbol
Q
V
Q
t
t
I
I
Q
Q
SD (4)
d(on)
d(off)
SDM
RRM
oss (5)
I
Q
Q
gls (6)
SD
t
t
t
rr
gs
gd
r
f
rr
g
j
= 25
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Third-quadrant Gate Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
o
C, I
D
= 150A, V
Parameter
Parameter
Parameter
DD
and t
= 10V
f
< t
fmax
.
V
(Resistive Load, Figure 3)
V
V
V
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DS
DS
DD
DD
G
G
= 4.7
= 75 A
= 150 A
= 16V I
= 16 V
< 0 V
= 10 V
= 10 V
= 15 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 150A V
(5)
(4)
(6)
di/dt = 100A/µs
Q
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Gate charge for synchronous operation
V
oss =
T
GS
V
V
V
V
j
= 150°C
GS
GS
GS
GS
I
I
GS
D
D
= 0
C
= 0 V
= 10 V
oss
= 10 V
= 75 A
= 10 V
= 75 A
= 10 V
* V
in ,
C
oss =
Min.
Min.
Min.
C
gd +
C
ds .
Typ.
Typ.
Typ.
224
2.5
14
69
13
27
64
69
40
47
58
9
See Appendix A
Max.
Max.
Max.
150
600
1.3
93
54
Unit
Unit
Unit
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/9