STD2NB40 ST Microelectronics, STD2NB40 Datasheet - Page 3

• Manufacturer Part Number: STD2NB40
• Description: N-CHANNEL MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Symbol
Symbol
Symbol
V
I
SDM
t
t
I
r(Voff)
SD
Q
Q
d(on)
RRM
I
Q
Q
t
t
SD
t
t
rr
r
gs
gd
c
f
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
V
R
I
I
V
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
= 2 A
= 2 A
= 200 V
= 320 V
= 320 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
di/dt = 100 A/ s
V
V
GS
GS
I
I
I
D
D
V
D
T
= 0
=2 A V
GS
j
= 1 A
= 2 A
= 10 V
= 150
= 10 V
GS
o
C
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
460
5.6
14
25
22
13
24
12
24
6
9
Max.
Max.
Max.
1.5
STD2NB40
2
8
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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