GP200MKS12 Dynex Semiconductor, GP200MKS12 Datasheet - Page 6

• Manufacturer Part Number: GP200MKS12
• Description: IGBT Chopper Module Preliminary Information
• Manufacturer: Dynex Semiconductor

GP200MKS12
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Fig. 9 Freewheel diode typical forward characteristics
400
350
300
250
200
150
100
28
24
20
16
12
36
32
50
8
4
0
0
0
0
Fig. 7 Freewheel diode typical turn-off energy
V
V
GE
CE
25
= 900V
= ±15V
0.5
50
vs collector current
1
Forward voltage, V
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
75
1.5
T
j
100
= 25˚C
T
case
2
= 125˚C
125
F
T
T
- (V)
case
- (A)
T
j
2.5
= 125˚C
150
= 25˚C
175
3
200
3.5
10000
1000
100
900
800
700
600
500
400
300
200
100
10
1
0
1
0
I
C
Fig. 10 Reverse bias safe operating area
Fig. 8 Typical switching characteristics
max. (single pulse)
t
t
d(off)
d(on)
Collector-emitter voltage, V
10
t
t
50
r
f
Collector current, I
100
100
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C
- (A)
ce
1000
- (V)
150
T
V
V
R
j
GE
CE
g
= 125˚C
100 s
50 s
t
= 4.7
p
= 600V
= 15V
= 1ms
10000
200