EGF1T Vishay Siliconix, EGF1T Datasheet

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EGF1T

Manufacturer Part Number
EGF1T
Description
Surface Mount Glass Passivated Ultrafast Rectifier
Manufacturer
Vishay Siliconix
Datasheet
1.EGF1T.pdf (4 pages)

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www.DataSheet.co.kr
Document Number: 88904
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
Operating junction and storage temperature range
T
V
J
I
I
E
F(AV)
FSM
RRM
max.
t
AS
rr
Surface Mount Glass Passivated Ultrafast Rectifier
SUPERECTIFIER
DO-214BA (GF1)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
A
= 25 °C unless otherwise noted)
A
= 25 °C, I
®
1300 V
150 °C
15 mJ
1.0 A
75 ns
20 A
This datasheet is subject to change without notice.
AS
= 1 A, L = 30 mH
New Product
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• Avalanche surge energy capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020, LF maximum peak of
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
TYPICAL APPLICATIONS
For use in high voltage rectification of photoflash
application.
MECHANICAL DATA
Case: DO-214BA, molded plastic over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
250 °C
accordance to WEEE 2002/96/EC
SYMBOL
T
J
V
V
I
I
V
, T
F(AV)
E
FSM
RRM
RMS
DC
AS
STG
DiodesEurope@vishay.com
Vishay General Semiconductor
- 55 to + 150
EGF1T
1300
1300
910
1.0
ET
20
15
www.vishay.com/doc?91000
www.vishay.com
UNIT
EGF1T
mJ
°C
V
V
V
A
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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EGF1T Summary of contents

Page 1

... This datasheet is subject to change without notice. Vishay General Semiconductor EGF1T ET V 1300 RRM V 910 RMS V 1300 DC I 1.0 F(AV FSM 150 J STG DiodesEurope@vishay.com www.vishay.com/doc?91000 EGF1T UNIT °C www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 2

... A SYMBOL R R PREFERRED PACKAGE CODE 67A 5CA 67A 5CA 125 150 175 Fig Maximum Non-Repetitive Forward Surge Current This datasheet is subject to change without notice. EGF1T UNIT (1) V 3.0 F 5.0 ( 8.0 J EGF1T UNIT (1) 50  ...

Page 3

... Reverse Voltage (V) Fig Typical Junction Capacitance Per Leg 100 Pulse Duration (s) Fig Typical Transient Thermal Impedance Mounting Pad Layout 0.076 (1.93) 0.066 (1.68) MAX. MIN. 0.060 (1.52) MIN. 0.220 (5.58) REF. www.vishay.com DiodesEurope@vishay.com www.vishay.com/doc?91000 EGF1T 100 100 3 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 4

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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