D2002UK Semelab Group, D2002UK Datasheet - Page 2

• Manufacturer Part Number: D2002UK
• Description: Metal Gate Rf Silicon Fet
• Manufacturer: Semelab Group

ELECTRICAL CHARACTERISTICS
* Pulse Test:
THERMAL DATA
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
BV
I
I
V
g
G
η
VSWR Load Mismatch Tolerance
C
C
C
R
DSS
GSS
fs
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
GS(th)
iss
oss
rss
THj–case
PS
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
DSS
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Pulse Duration = 300 μs , Duty Cycle ≤ 2%
Telephone [phone]. Fax [phone].
E-mail:
[e-mail]
Thermal Resistance Junction – Case
HAZARDOUS MATERIAL WARNING
V
V
V
(T
DS
DS
DS
case
V
V
V
I
V
P
V
f = 1GHz
D
GS
DS
GS
DS
O
DS
Website:
= 0
= 28V
= 28V
= 10mA
= 5W
= 25°C unless otherwise stated)
= 28V
= 10V
= 28V
= 0
= 20V
Test Conditions
http://www.semelab.co.uk
V
V
V
GS
GS
GS
= –5V f = 1MHz
= 0
= 0
I
V
V
V
I
I
D
D
DQ
GS
DS
DS
= 10mA
= 0.4A
= 0.2A
= 0
= V
= 0
f = 1MHz
f = 1MHz
GS
Min.
0.36
20:1
65
13
40
1
Typ.
Document Number 3500
D2002UK
Max. 6.0°C / W
Max. Unit
24
12
2
1
7
1
Issue 2
mA
μA
dB
pF
pF
pF
—
%
V
V
S