BCR 116E6433 Infineon Technologies, BCR 116E6433 Datasheet
BCR 116E6433
Related parts for BCR 116E6433
BCR 116E6433 Summary of contents
Page 1
... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4. For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR116/F/L3 BCR116S BCR116T/W SEMH13 TR1 ...
Page 2
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipation- BCR116, T 102°C S BCR116F, T 128°C S BCR116L3, T 135°C S BCR116S, T 115°C S BCR116T, T 109°C S BCR116W, T 124°C ...
Page 3
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage = 10 µ Collector-base cutoff current ...
Page 4
DC current gain (common emitter configuration Input on Voltage (on 0.3V (common emitter ...
Page 5
Total power dissipation P BCR116 300 mW 200 150 100 Total power dissipation P BCR116L3 300 mW 200 150 100 Total power dissipation ...
Page 6
Total power dissipation P BCR116T 300 mW 200 150 100 Total power dissipation P SEMH13 300 mW 200 150 100 Total power dissipation ...
Page 7
Permissible Pulse Load R BCR116 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS BCR116F ...
Page 8
Permissible Puls Load R thJS BCR116L3 Permissible Puls Load R thJS BCR116S 0.5 0.2 0.1 0.05 ...
Page 9
Permissible Puls Load R thJS BCR116T D=0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS BCR116W 3 ...
Page 10
Permissible Puls Load R thJS SEMH13 Permissible Pulse Load p P totmax SEMH13 ...