1N5822-TB WonTop Electronics Co., Ltd, 1N5822-TB Datasheet - Page 2

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1N5822-TB

Manufacturer Part Number
1N5822-TB
Description
3.0a Schottky Barrier Diode
Manufacturer
WonTop Electronics Co., Ltd
Datasheet
1N5820 – 1N5822
100
60
40
20
0
80
3
4
2
1
0
10
1
8.3ms Single Half Sine-Wave
Fig. 1 Forward Current Derating Curve
JEDEC Method
Fig. 3 Peak Forward Surge Current
T , LEAD TEMPERATURE (ºC)
L
NUMBER OF CYCLES AT 60 Hz
50
10
60 Hz Resistive or Inductive
Load 9.5mm Lead Length
Single Phase Half-Wave
100
150
100
2 of 4
1000
100
10
10
1.0
0.1
30
0.1
0.1
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Voltage Characteristics
F
Fig. 4 Typical Junction Capacitance
0.3
V , REVERSE VOLTAGE (V)
R
1.0
0.5
© 2006 Won-Top Electronics
0.7
Pulse Width = 300 s
10
2% Duty Cycle
T = 25ºC
j
0.9
T = 25ºC
f = 1MHz
j
100
1.1

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