SSC-FAT801 Seoul Semiconductor, SSC-FAT801 Datasheet - Page 3

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SSC-FAT801

Manufacturer Part Number
SSC-FAT801
Description
TOP LED DEVICE
Manufacturer
Seoul Semiconductor
Datasheet
www.DataSheet4U.com
SSC-QP-0401-06(REV.02)
3. Absolute Maximum Ratings
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 I
4. Electro-Optical Characteristics
Forward Voltage
Reverse Current
Luminance Intensity
Peak Wavelength
Dominant Wavelength
Spectral Bandwidth 50%
Viewing Angle
*1 The luminous intensity I
*2 2
[Note] All measurements were made under the standardized environment of SSC.
Luminous Intensity Measurement allowance is ±10%.
Operating Temperature
FM
Peak Forward Current
θ
Storage Temperature
½
Power Dissipation
was measured at T
is the off-axis where the luminous intensity is 1/2 of the peak intensity.
Forward Current
Reverse Voltage
Parameter
Parameter
*2
W
V
≤ 0.1msec of pulse width and D ≤ 1/10 of duty ratio.
was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
*1
148-29 Kasan-Dong, Keumchun-Gu, Seoul, 153-023, Korea
SEOUL SEMICONDUCTOR CO., LTD.
Symbol
I
*1
Symbol
FM
T
T
P
V
I
2
opr
∆λ
stg
F
V
λ
λ
Phone : 82-2-2106-7305~6
I
I
d
R
θ
R
V
F
P
d
*2
½
- 3/8 -
Condition
I
I
I
I
I
I
F
F
F
F
F
F
V
=20mA
=20mA
=20mA
=20mA
=20mA
=20mA
R
=5V
-40 ~ +100
-40 ~ +100
Value
100
85
30
5
Min
120
600
-
-
-
-
-
Typ
210
612
606
120
2.0
14
-
Max
612
2.5
10
-
-
-
-
Unit
mW
mA
mA
ºC
ºC
V
(T
(T
SSC-FAT801
A
A
Unit
mcd
deg.
=25ºC)
=25ºC)
µA
nm
nm
nm
V

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