1N4005-G Comchip Technology Corporation, 1N4005-G Datasheet
1N4005-G
Manufacturer Part Number
1N4005-G
Description
General Purpose Silicon Rectifiers
Manufacturer
Comchip Technology Corporation
Datasheet
1.1N4005-G.pdf
(2 pages)
Features
Mechanical data
QW-BG013
1N4001-G Thru. 1N4007-G
Voltage: 50 to 1000 V
Current: 1.0 A
RoHS Device
Electrical Characteristics (at T
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
General Purpose Silicon Rectifiers
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375"(9.5mm) Lead Length @T
Peak Forward Surge Current,
8.3mS single half sine-wave superimposed on
rated load (JEDEC method)
Maximum Instantaneous Forward Voltage @1.0A
Maximum DC Reverse Current at Rated
DC Blocking voltage per element
Maximum Full Load Reverse Current,full cycle
average 0.375”(9.5mm)lead length at T
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Ttemperature Range
NOTES:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance from junction to terminal 6.0mm copper pads to each terminal.
-Low cost construction.
-Fast forward voltage drop.
-Low reverse leakage.
-High forward surge current capability.
-High soldering temperature guarantee: 260 C/10
-Case: transfer molded plastic, DO-41
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Indicated by cathode band
-Lead: Plated axial lead, solderable per MIL-STD-
-Mounting position: Any
-Weight: 0.012ounce, 0.33 grams
seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg)
tension.
202E, method 208C
Parameter
O
A
=55
O
L
C
=75 C
T
T
A
A
O
=25 C
=100 C
O
O
A
Comchip Technology CO., LTD.
2
=25 C unless otherwise noted)
Symbol
V
V
I
T
R
V
I
I
R(AV)
FSM
V
C
(AV)
T
RRM
RMS
I
STG
θJA
DC
R
F
J
J
O
O
1N
-G
50
35
50
4001
1N
100
100
-G
70
4002
1N
200
140
200
-G
4003
-55 ~ +150
-55 ~ +150
1N
0.034(0.90)
0.028(0.70)
Dimensions in inches and (millimeter)
400
280
400
1.0
5.0
1.1
0.107(2.70)
0.080(2.00)
-G
30
50
30
15
60
4004
1N
600
420
600
4005
-G
DO-41
1.0(25.40) Min.
1.0(25.40) Min.
1N
800
560
800
SMD Diodes Specialist
-G
4006
0.205(5.20)
0.160(4.20)
COMCHIP
1N
1000
1000
700
-G
4007
Unit
O
C/W
REV:A
Page 1
μA
μA
P
O
O
V
V
V
A
A
V
F
C
C
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1N4005-G Summary of contents
Page 1
General Purpose Silicon Rectifiers 1N4001-G Thru. 1N4007-G Voltage 1000 V Current: 1.0 A RoHS Device Features -Low cost construction. -Fast forward voltage drop. -Low reverse leakage. -High forward surge current capability. -High soldering temperature guarantee: 260 C/10 seconds, ...
Page 2
General Purpose Silicon Rectifiers Rating and Characteristic Curves ( 1N4001 Fig.1 Typical Forward Current Derating Curve 1.2 1.0 0.8 0.6 0.4 Single phase 0.2 Half wave, 60Hz Resistive or inductive load 100 125 T , ...