MAC4DCN ON Semiconductor, MAC4DCN Datasheet - Page 6

• Manufacturer Part Number: MAC4DCN
• Description: Triacs Silicon Bidirectional Thyristors
• Manufacturer: ON Semiconductor

8.0 K
6.0 K
4.0 K
2.0 K
10 K
0
100
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
I
800 V
TM
ADJUST FOR
Figure 13. Typical Exponential Static dv/dt
600 V
, 60 Hz V
200 V
versus Junction Temperature, MT2(+)
V
PK
CHARGE
105
RMS
= 400 V
AC
T
J
, JUNCTION TEMPERATURE ( C)
TRIGGER
Note: Component values are for verification of rated (di/dt)
110
100
1.0
10
CONTROL
NON-POLAR
115
CHARGE
0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
V
DRM
t
w
GATE OPEN
5.0
C
MAC4DCM, MAC4DCN
L
Figure 15. Critical Rate of Rise of
T
f =
120
J
(di/dt)
= 125 C
2 t
1
w
http://onsemi.com
c
10
=
Commutating Voltage
6f I
1000
TM
125
15
100 C
6
L
8.0 K
6.0 K
4.0 K
2.0 K
14 K
12 K
10 K
1N914
L
20
0
c
100
. See AN1048 for additional information.
MEASURE
51 W
800 V
Figure 14. Typical Exponential Static dv/dt
600 V
I
25
75 C
MT2
versus Junction Temperature, MT2(−)
G
V
V
PK
105
PK
MT1
= 400 V
= 400 V
30
T
J
, JUNCTION TEMPERATURE ( C)
35
110
1N4007
115
−
+
200 V
GATE OPEN
120
c
125