MMBT489 ON Semiconductor, MMBT489 Datasheet - Page 2

• Manufacturer Part Number: MMBT489
• Description: High Current Npn Transistor Switching Transistor
• Manufacturer: ON Semiconductor

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector− Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector−Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
Base −Emitter Saturation Voltage (Note 3)
Base −Emitter Turn−on Voltage (Note 3)
Cutoff Frequency
Output Capacitance
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(f = 1.0 MHz)
0
C
C
E
C
C
C
C
C
C
C
C
C
CB
CES
EB
0.001
= 10 mAdc, I
= 0.1 mAdc, I
= 0.1 mAdc, I
= 50 mA, V
= 0.5 A, V
= 1.0 A, V
= 1.0 A, I
= 0.5 A, I
= 0.1 A, I
= 1.0 A, I
= 1.0 mA, V
= 100 mA, V
I
C
= 4.0 Vdc)
= 30 Vdc, I
= 30 Vdc)
= 100 mA
I
B
B
B
B
C
CE
CE
= 100 mA)
= 50 mA)
= 1.0 mA)
= 0.1 A)
CE
= 500 mA
CE
CE
B
E
C
= 5.0 V)
= 5.0 V)
E
Figure 1. V
= 5.0 V)
= 0)
= 0)
= 2.0 V)
= 0)
= 0)
= 5.0 V, f = 100 MHz
I
C
= 1 A
0.01
Characteristic
I
b
CE
(A)
versus I
I
C
(T
= 2 A
A
= 25°C unless otherwise noted)
b
0.1
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MMBT489LT1
0.2
2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
I
BE(on)
h
CBO
CES
EBO
f
obo
FE
T
Figure 2. V
0.01
I
Min
300
300
200
100
5.0
c
CE
30
50
−
−
−
−
−
−
−
−
−
(A)
versus I
0.1
I
c
0.200
0.125
0.075
/I
Max
900
0.1
0.1
0.1
1.1
1.1
15
b
−
−
−
−
−
−
c
I
= 10
c
/I
b
= 100
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1
pF
V
V
V
2