MMBTSA1235 SEMTECH ELECTRONICS LTD., MMBTSA1235 Datasheet
MMBTSA1235
Manufacturer Part Number
MMBTSA1235
Description
Silicon Epitaxial Planar Transistor
Manufacturer
SEMTECH ELECTRONICS LTD.
Datasheet
1.MMBTSA1235.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTSA1235
Manufacturer:
ST/先科
Quantity:
20 000
MMBTSA1235
for low frequency amplification applications
The transistor is subdivided into two groups E and F,
according to its DC current gain.
Absolute Maximum Ratings (T
Characteristics at T
PNP Silicon Epitaxial Planar Transistor
DC Current Gain
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Gain Bandwidth Product
Collector Output Capacitance
Noise Figure
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
at -V
at -V
at -I
at -I
at -I
at -V
at -V
at -I
at -I
at -V
at -V
at -V
C
C
C
C
C
CE
CE
CB
EB
CE
CB
CE
= 100 µA
= 100 µA
= 100 µA
= 100 mA, -I
= 100 mA, -I
= 6 V, -I
= 6 V, -I
= 60 V
= 6 V
= 6 V, -I
= 6 V, f = 1 MHz
= 6 V, I
®
E
SEMTECH ELECTRONICS LTD.
C
C
C
= 0.3 mA, f = 100 Hz, R
(Subsidiary of Sino-Tech International Holdings Limited, a company
a
= 1 mA
= 0.1 mA
= 10 mA
= 25
B
B
listed on the Hong Kong Stock Exchange, Stock Code:
= 10 mA
= 10 mA
O
Parameter
Parameter
C
a
= 25
Current Gain Group
O
C)
G
= 10 KΩ
E
F
724)
-V
-V
-V
Symbol
-V
-V
-I
-I
(BR)CBO
(BR)CEO
(BR)EBO
C
h
h
h
NF
CE(sat)
BE(sat)
CBO
EBO
f
Symbol
FE
FE
FE
T
ob
-V
-V
-V
P
-I
T
T
CBO
CEO
EBO
tot
C
S
j
Min.
150
250
90
60
50
6
-
-
-
-
-
-
-
SOT-23 Plastic Package
- 55 to + 150
Value
Typ.
200
200
200
150
60
50
4
-
-
-
-
-
-
-
-
-
-
-
6
Dated : 05/08/2006
Max.
300
500
0.1
0.1
0.3
20
1
-
-
-
-
-
-
Unit
mW
mA
O
O
V
V
V
C
C
MHz
Unit
µA
µA
dB
pF
V
V
V
V
V
-
-
-
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MMBTSA1235 Summary of contents
Page 1
... MMBTSA1235 PNP Silicon Epitaxial Planar Transistor for low frequency amplification applications The transistor is subdivided into two groups E and F, according to its DC current gain. Absolute Maximum Ratings ( Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature ...
Page 2
... MMBTSA1235 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: ® Power Dissipation vs Ambient Temperature 300 250 200 150 100 100 125 150 Ambient Temperature 724) Dated : 05/08/2006 ...