MMBTH81-NL Fairchild Semiconductor, MMBTH81-NL Datasheet - Page 2

• Manufacturer Part Number: MMBTH81-NL
• Description: Mpsh81 / Mmbth81 Pnp Rf Transistor
• Manufacturer: Fairchild Semiconductor

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
C
Symbol
CBO
EBO
T
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
ce
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Spice Model
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)
Typical Characteristics
on
sat
200
180
160
140
120
100
80
60
40
20
)
-
)
0
0.1
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Collector Emitter Capcitance
I - COLLECTOR CURRENT (mA)
DC Current Gain vs
C
Collector Current
-
1
T = 55°C
Parameter
T = 25°C
A
A
T = 125°C
-
A
-
10
V
CE
TA = 25°C unless otherwise noted
= 1.0V
-
100
I
I
I
V
V
I
I
I
I
f = 100 MHz
V
V
C
C
E
C
C
C
C
CB
EB
CB
CB
= 1.0 mA, I
= 10 A, I
= 10 A, I
= 5.0 mA, V
= 5.0 mA, I
= 5.0 mA, V
= 5.0 mA, V
= 10 V, I
= 2.0 V, I
= 10 V, I
= 10 V, I
Test Conditions
-
E
C
-
-
E
E
B
-
0.05
0.02
0.01
-
B
C
B
-
= 0
= 0
0.5
0.2
0.1
CE
CE
CE
= 0, f = 1.0 MHz
= 0, f = 1.0 MHz
-
= 0
= 0
= 0.5 mA
-
= 0
1
0.1
= 10 V
= 10 V
= 10 V,
Collector Saturation Voltage
vs Collector Current
I - COLLECTO R CURRENT ( mA)
C
T = 25°C
A
-
1
T = 55°C
A
Min
-
600
PNP RF Transistor
3.0
20
20
60
T = 125°C
A
-
10
Max
0.85
0.65
100
100
0.5
0.9
I
C
= 10 I
(continued)
-
B
100
Units
MHz
nA
nA
pF
pF
V
V
V
V
V
3