MMBF4117-NL Fairchild Semiconductor, MMBF4117-NL Datasheet

no-image

MMBF4117-NL

Manufacturer Part Number
MMBF4117-NL
Description
Pn4117 / 4118 / 4119 / Mmbf4117 / 4118 / 4119 N-channel Switch
Manufacturer
Fairchild Semiconductor
Datasheet
1997 Fairchild Semiconductor Corporation
V
V
I
T
P
R
R
Symbol
GF
Symbol
J
DG
GS
D
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*
N-Channel Switch
This device is designed for low current DC and audio applications.
These devices provide excellent performance as input stages for
sub-picoamp instrumentation or any high impedance signal
sources. Sourced from Process 53.
Absolute Maximum Ratings*
JC
JA
,T
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
Derate above 25 C
S
D
PN4117
PN4118
PN4119
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
Mark: 61A / 61C / 61E
PN4117-4119
MMBF4117
MMBF4118
MMBF4119
SOT-23
350
125
357
2.8
G
NOTE: Source & Drain
are interchangeable
Max
-55 to +150
*MMBF4117-4119
Value
D
- 40
40
50
225
556
1.8
S
Units
mA
V
V
C
mW/ C
Units
mW
C/W
C/W

Related parts for MMBF4117-NL

MMBF4117-NL Summary of contents

Page 1

... MMBF4119 TO-92 SOT-23 Mark: 61A / 61C / 61E TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted PN4117-4119 350 2.8 125 357 NOTE: Source & Drain are interchangeable Value Units -55 to +150 C Max Units *MMBF4117-4119 225 mW 1.8 mW/ C C/W 556 C/W ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Gate-Source Breakdown Voltage (BR)GSS I Gate Reverse Current GSS V Gate-Source Cutoff Voltage GS(off) ON CHARACTERISTICS I Zero-Gate Voltage Drain Current* DSS SMALL-SIGNAL CHARACTERISTICS Common-Source Forward g fs Transconductance Common-Source Output g oss ...

Page 3

Typical Characteristics Parameter Interactions Transfer Characteristics Transfer Characteristics N-Channel Switch (continued) Transfer Characteristics Transfer Characteristics Transfer Characteristics ...

Page 4

Typical Characteristics Leakage Current vs. Voltage Output Conductance vs. Drain Current Transconductance vs. Drain Current (continued) Common Drain-Source Capacitance vs. Voltage Noise Voltage vs. Frequency N-Channel Switch (continued) 5 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

Related keywords