MMBTA13-MMBTA14 SeCoS Halbleitertechnologie GmbH, MMBTA13-MMBTA14 Datasheet

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MMBTA13-MMBTA14

Manufacturer Part Number
MMBTA13-MMBTA14
Description
Darlington Amplifier Transistor Npn Silicon
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
01-Jun-2004 Rev. B
http://www.SeCoSGmbH.com
FEATURES
ELECTRICAL CHARACTERISTICS(Tamb=25℃
*
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Marking : MMBTA13:K2D;MMBTA14:K3D
Pulse Test : pulse width≤300μs,duty cycle≤2%。
Power dissipation
Collector current
Collector-base voltage
Operating and storage junction temperature range
2
3
Elektronische Bauelemente
Parameter
P
I
V
T
CM
J
CM
(BR)CBO
,T
:
:
stg
BASE 1
: -55℃ to +150
: 30V
0.3A
0.3W(Tamb=25℃)
COLLECTOR 3
EMITTER 2
A suffix of "-C" specifies halogen & lead-free
V
V
V
V
h
Symbol
h
V
FE(1)
CE (sat)
(BR)CBO
(BR)CEO
FE(2)
V
(BR)EBO
I
I
CBO
EBO
BE
f
RoHS Compliant Product
T
*
*
*
*
D
1
Ic= 100
Ic= 100uA, I
I
V
V
V
I
V
V
f=
V
E
C
G
3
A
CB
EB
CE
CE
CE
CE
= 100
=100 mA, I
Test
100MHz
unless otherwise specified)
= 10V ,
L
=30 V , I
=5V, I
=5V, I
=5V,I
=5V, I
2
μ
μ
Darlington Amplifier Transistor NPN Silicon
C
C
C
H
conditions
= 100mA
A, I
A, I
= 10mA
= 100mA
C
B S
= 10mA
B
E
=0.1mA
I
B
C
=0
C
=0
c
=0
=0
E
=0
K
MMBTA13
MMBTA14
MMBTA13
MMBTA14
Any changing of specification will not be informed individual
MMBTA13
MMBTA14
J
10000
10000
20000
5000
MIN
125
30
30
10
Dim
All Dimension in mm
B
C
D
G
H
K
A
J
L
S
V
MAX
SOT-23
0.1
0.1
1.5
2.0
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Min
UNIT
μ
μ
MHz
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
Max
V
V
V
V
V
A
A
Page 1 of 3

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MMBTA13-MMBTA14 Summary of contents

Page 1

... DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency * Pulse Test : pulse width≤300μs,duty cycle≤2%。 Marking : MMBTA13:K2D;MMBTA14:K3D http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free ...

Page 2

... Elektronische Bauelemente Figure 1. Noise Voltage Figure 3. Total Wideband Noise Voltage http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B MMBTA13 MMBTA14 Darlington Amplifier Transistor NPN Silicon Figure 2. Noise Current Figure 4. Wideband Noise Figure Figure 5. Thermal Response Any changing of specification will not be informed individual Page ...

Page 3

... Elektronische Bauelemente Figure 6. Capacitance Figure 8. DC Current Gain Figure 10. “On” Voltages http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B MMBTA13 MMBTA14 Darlington Amplifier Transistor NPN Silicon Figure 7. High Frequency Current Gain Figure 9. Collector Saturation Region q q Figure 11. Temperature Coefficients Any changing of specification will not be informed individual ...

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