MMBT2907AL ON Semiconductor, MMBT2907AL Datasheet - Page 2

• Manufacturer Part Number: MMBT2907AL
• Description: Pnp Transistor General Purpose Transistor
• Manufacturer: ON Semiconductor

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
5. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
0
-16 V
Collector-Emitter Breakdown Voltage (Note 4)
Collector - Base Breakdown Voltage (I
Emitter - Base Breakdown Voltage (I
Collector Cutoff Current (V
Collector Cutoff Current
(V
(V
Base Cutoff Current (V
DC Current Gain
Collector - Emitter Saturation Voltage (Note 4)
Base - Emitter Saturation Voltage (Note 4)
Current - Gain - Bandwidth Product (Notes 4, 5),
Output Capacitance (V
Input Capacitance (V
INPUT
Z
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
T
(I
(I
CB
CB
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
o
Figure 1. Delay and Rise Time Test Circuit
C
C
C
C
C
C
C
C
C
C
C
C
is defined as the frequency at which |h
= 50 W
200 ns
= -50 Vdc, I
= -50 Vdc, I
= -1.0 mAdc, I
= -10 mAdc, I
= -0.1 mAdc, V
= -1.0 mAdc, V
= -10 mAdc, V
= -150 mAdc, V
= -500 mAdc, V
= -150 mAdc, I
= -500 mAdc, I
= -150 mAdc, I
= -500 mAdc, I
= -50 mAdc, V
E
E
= 0)
= 0, T
B
B
CE
CE
B
B
B
B
CE
CE
EB
= 0)
CE
CE
= 0)
50
CE
= -15 mAdc) (Note 4)
= -50 mAdc)
= -15 mAdc)
= -50 mAdc)
CB
= -10 Vdc)
= -20 Vdc, f = 100 MHz)
= -10 Vdc)
= -10 Vdc)
= -2.0 Vdc, I
1.0 k
= -10 Vdc)
= -10 Vdc) (Note 4)
A
= -30 Vdc, V
= -10 Vdc, I
CE
= 125°C)
= -30 Vdc, V
Characteristic
E
C
-30 V
200
C
= -10 mAdc, I
E
EB(off)
= 0, f = 1.0 MHz)
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
= -10 mAdc, I
= 0, f = 1.0 MHz)
(T
fe
EB(off)
A
| extrapolates to unity.
= 25°C unless otherwise noted)
(V
= -0.5 Vdc)
CC
(V
(V
= -0.5 Vdc)
= -30 Vdc, I
CC
CC
C
E
= 0)
I
= -6.0 Vdc, I
= -6.0 Vdc, I
B1
I
I
B1
B1
= 0)
MMBT2907ALT1
http://onsemi.com
= -15 mAdc)
= I
= I
B2
B2
C
= -15 mAdc)
= -15 mAdc)
= -150 mAdc,
C
C
2
= -150 mAdc,
= -150 mAdc,
0
-30 V
Figure 2. Storage and Fall Time Test Circuit
INPUT
Z
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
o
200 ns
= 50 W
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
I
C
h
CEX
CBO
I
t
t
f
BL
obo
on
t
off
t
t
t
FE
ibo
T
d
s
r
f
50
1.0 k
-5.0
Min
-60
-60
-60
100
100
100
200
+15 V
75
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0 k
1N916
-6.0 V
-0.010
37
Max
-0.4
-1.6
-1.3
-2.6
-50
-10
-50
300
100
8.0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
30
45
10
40
80
30
-
-
-
-
-
-
-
-
-
nAdc
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
ns
-