MMBT2369-NL Fairchild Semiconductor, MMBT2369-NL Datasheet
MMBT2369-NL
Manufacturer Part Number
MMBT2369-NL
Description
Mmbt2369 Npn Switching Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT2369-NL.pdf
(4 pages)
©2005 Fairchild Semiconductor Corporation
MMBT2369 Rev. B
MMBT2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
• Sourced from process 21.
Absolute Maximum Ratings *
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
V
I
On Characteristics
h
V
V
Small Signal Characteristics
C
C
h
C
CBO
Symbol
J
FE
fe
CEO
CBO
EBO
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
collector currents of 10mA to 100mA.
, T
Symbol
STG
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Small -Signal Current Gain
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
T
a
= 25°C unless otherwise noted
T
a
Parameter
= 25 C unless otherwise noted
- Continuous
C
I
I
I
I
V
V
I
I
I
I
V
V
I
f = 100MHz
C
C
C
E
C
C
C
C
C
CB
CB
CB
EB
= 10 A, I
= 10mA, I
= 10 A, V
= 10 A, I
= 10mA, V
= 100mA, V
= 10mA, I
= 10mA, I
= 10mA, V
= 0.5V, I
= 20V, I
= 20V, I
= 5.0V, I
1
B
Test Condition
E
C
B
E
E
B
B
BE
E
C
CE
CE
= 0
= 0
= 0
= 0
= 0, T
= 1.0mA
= 1.0mA
E
SOT-23
CE
= 0, f = 1.0MHz
= 0, f = 1.0MHz
Mark: 1J
= 0
= 1.0V
= 10V, R
= 2.0V
a
= 125 C
G
= 2.0k ,
Ratings
-55 ~ 150
200
4.5
15
40
Min.
4.5
0.7
5.0
15
40
40
40
20
Max.
0.25
0.85
120
0.4
4.0
5.0
30
www.fairchildsemi.com
Units
mA
V
V
V
C
Units
pF
pF
V
V
V
V
V
V
A
A
Related parts for MMBT2369-NL
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANSISTOR NPN 40V 200MA SOT-23
Manufacturer:
Infineon Technologies
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) AF TRANS GP BJT PNP 40V 0.2A
Manufacturer:
Infineon Technologies
Part Number:
Description:
Bipolar Small Signal AF TRANS GP BJT PNP 60V 0.6A
Manufacturer:
Infineon Technologies
Part Number:
Description:
Bipolar Small Signal AF TRANS GP BJT NPN 40V 0.6A
Manufacturer:
Infineon Technologies
Part Number:
Description:
Bipolar Small Signal AF TRANS GP BJT NPN 40V 0.2A
Manufacturer:
Infineon Technologies
Part Number:
Description:
MMBT Series 80 V 500 mA Surface Mount PNP Silicon Driver Transistor - SOT-23
Manufacturer:
ON Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet: