MMBT5401-NL Fairchild Semiconductor, MMBT5401-NL Datasheet - Page 3

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MMBT5401-NL

Manufacturer Part Number
MMBT5401-NL
Description
Mmbt5401 Pnp Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
200
150
100
1.0
0.8
0.6
0.4
0.2
100
50
0.1
0
1E-4
10
0.1
1
25
Figure 1. Typical Pulsed Current Gain
V
Figure 5. Collector-Cutoff Current
Figure 3. Base-Emitter Saturation
CE
V
- 40
= 5V
Voltage vs Collector Current
CB
- 40
I
C
vs Ambient Temperature
T - AM BIENT TE MPE RATURE ( C)
I
o
= 10 0V
C
50
C
- COLLECTOR CURRENT (mA)
A
1E-3
o
- COLLECTOR CURRENT (A)
vs Collector Current
C
25
125
o
1
25
C
125
o
o
C
C
75
o
C
0.01
100
10
0.1
125
°
= 10
100
150
1
Figure 6. Collector-Emitter Breakdown Voltage
0.4
0.3
0.2
0.1
0.0
1.0
0.8
0.6
0.4
0.2
220
210
200
190
180
170
0.1
0.1
0.1
with Resistance Between Emitter-Base
Figure 2. Collector-Emitter Saturation
Figure 4. Base-Emitter On Voltage vs
= 10
- 40
Voltage vs Collector Current
Between Emitter-Base
I
I
C
C
o
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
C
1
Collector Current
25
1
1
o
RESISTANCE (k )
C
125
125
o
C
10
o
C
10
10
25
100
o
V
C
- 40
CE
o
= 5V
C
Rev. B1, August 2004
100
100
1000

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