MMBT3904L-AL3-R Unisonic Technologies, MMBT3904L-AL3-R Datasheet - Page 2

• Manufacturer Part Number: MMBT3904L-AL3-R
• Description: Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

MMBT3904
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector Cut-off Current
Base Cut-off Current
Collector-base breakdown voltage
Collector-emitter breakdown voltage (note)
Emitter-base breakdown voltage
DC current gain (note)
Collector-emitter saturation voltage (note)
Base-emitter saturation voltage (note)
Current gain bandwidth product
Output Capacitance
Turn on time
Turn off time
Note: Pulse test: PW<=300μs, Duty Cycle<=2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
ABSOLUTE MAXIMUM RATING
ELECTRICAL CHARACTERISTICS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
SYMBOL
V
V
V
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
V
V
V
h
h
h
h
h
I
t
C
t
CEX
I
OFF
( Ta=25℃, unless otherwise specified )
CBO
CEO
FE
FE
FE
FE
FE
EBO
f
ON
BL
T
ob
1
2
3
4
5
(Ta=25℃, unless otherwise specified)
1 I
2 I
1 I
2 I
V
V
I
I
I
V
V
V
V
V
V
V
V
I
I
C
C
E
C
C
C
C
B
B
CE
CE
CE
CE
CE
CE
CE
CE
CB
CC
=10μA, I
1=1mA
1=1
=10μA, I
=1mA, I
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=30V, V
=30V, V
=1V, I
=1V, I
=1V, I
=1V, I
=1V, I
=20V, I
=5V, I
=3V,
B
2=1mA
TEST CONDITIONS
SYMBOL
B
C
C
C
C
C
E
C
E
=0
=0, f=1MHz
=0.1mA
=1mA
=10mA
=50mA
=100mA
V
V
V
B
B
B
B
C
T
=0
=0
EB
EB
=1mA
=5mA
=1mA
=5mA
P
=10mA, f=100MHz
T
V
CBO
CEO
EBO
I
STG
C
C
J
BE
=3V
=3V
=0.5V,
NPN SILICON TRANSISTOR
I
C
=10mA,
-55 ~ +150
RATINGS
+150
200
350
60
40
6
0.65
MIN TYP MAX UNIT
100
300
60
40
40
70
60
30
6
0.85
0.95
300
250
0.2
0.3
QW-R206-012,B
50
50
70
4
UNIT
mW
mA
℃
℃
V
V
V
2 of 3
MHz
nA
nA
pF
ns
ns
V
V
V
V
V
V
V