ST2301 Stanson Technology, ST2301 Datasheet - Page 3

• Manufacturer Part Number: ST2301
• Description: P Channel Enchancement Mode MOSFET
• Manufacturer: Stanson Technology

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P Channel Enchancement Mode MOSFET
-2.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted )
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Parameter
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: [phone] FAX: [phone]
V
Symbol
R
V
t
(BR)DSS
I
t
Coss
I
I
V
Qgd
Ciss
Crss
DS(on)
Qgs
d(off)
D(on)
g
d(on)
GS(th)
Qg
GSS
DSS
t
t
SD
fs
r
f
I
V
V
V
V
V
V
D
V
V
V
V
V
DS
DS
V
I
V
=-1A,V
DS
DS
GS
GS
GS
DS
DS
S
DS
DS
ST2301
DS
DD
=-1.6A,V
≦ -5V,V
≦ -5V,V
=V
=-6V,V
=-4.5V,I
=-2.5V,I
=0V,I
=-30V,V
=-30V,V
=-5V,I
=0V,V
Condition
I
=-6V,V
=-6V,R
F=1MHz
D
T
R
GS
≡ -2.8A
J
G
=55 ℃
GEN
=6 Ω
,I
D
D
GS
=-250uA
D
GS
GS
GS
=-250uA -0.45
D
D
GS
GS
=-4.5V
=-2.8V
L
GS
GS
=-2.8A
=-2.0A
=-4.5V
=+8V
=6 Ω
=-4.5V
=-2.5V
=0V
=0V
=0V
=0V
Min Typ Max Unit
-20
-6
-3
0.145
0.09
0.85
-0.8 -1.2
415
223
6.5
5.8
1.7
23
13
36
42
34
+100 nA
0.12
0.17
-1.5
-10
25
60
70
60
10
-1
Page 3
nC
pF
nS
uA
Ω
V
V
A
V
S