MCR72-3 ON, MCR72-3 Datasheet - Page 2

• Manufacturer Part Number: MCR72-3
• Description: SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
• Manufacturer: ON

(1) Ratings apply for negative gate voltage or R GK = 1 k . Devices shall not have a positive gate voltage concurrently with a negative
(2) R GK current not included in measurement.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current (1)
Peak Forward On-State Voltage
Gate Trigger Current (Continuous dc) (2)
Gate Trigger Voltage (Continuous dc) (2)
Gate Non–Trigger Voltage
Holding Current
Gate Controlled Turn-On Time
Critical Rate-of-Rise of Off-State Voltage
voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such
that the voltage applied exceeds the rated blocking voltage.
(V AK = Rated V DRM or V RRM ; R GK = 1 k )
(I TM = 16 A Peak, Pulse Width
(V D = 12 V, R L = 100 )
(V D = 12 V, R L = 100 )
(V D = 12 Vdc, R L = 100 , T J = 110 C)
(V D = 12 V, Initiating Current = 200 mA, Gate Open)
(V D = Rated V DRM , I TM = 16 A, I G = 2 mA)
(V D = Rated V DRM , R GK = 1 k , T J = 110 C, Exponential Waveform)
Characteristic
p
Characteristic
1 ms, Duty Cycle
(T C = 25 C unless otherwise noted.)
MCR72–3, MCR72–6, MCR72–8
p
http://onsemi.com
2%)
T J = 25 C
T J = 110 C
2
I DRM , I RRM
Symbol
V TM
V GD
dv/dt
V GT
I GT
I H
t gt
Symbol
R JC
R JA
T L
Min
0.1
—
—
—
—
—
—
—
—
Typ
Max
1.7
0.5
1.0
260
2.2
30
10
—
—
—
—
60
Max
500
200
2.0
1.5
6.0
10
—
—
—
Unit
C/W
C/W
C
Volts
Volts
Volts
V/ s
Unit
mA
A
A
A
s