BAS116TT1G ON Semiconductor, BAS116TT1G Datasheet - Page 2

• Manufacturer Part Number: BAS116TT1G
• Description: Bas116tt1g Switching Diode
• Manufacturer: ON Semiconductor

+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current (V
Reverse Voltage Leakage Current
Forward Voltage (I
Forward Voltage
Forward Voltage
Forward Voltage
Diode Capacitance (V
Reverse Recovery Time (I
1,000
100
50 W Output
0.1
10
Generator
1
Pulse
0
820 W
0.2
0.1 mF
(I
(I
(I
F
F
F
F
2.0 k
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
100 mH
Figure 2. Forward Voltage
V
R
F
, FORWARD VOLTAGE (V)
= 0 V, f = 1.0 MHz)
0.4
F
= I
BR
R
I
F
Characteristic
= 10 mAdc) (Figure 1)
150°C
= 100 mAdc)
(V
0.6
1. A 2.0 kW variable resistor adjusted for a Forward Current (I
2. Input pulse is adjusted so I
3. t
DUT
R
R
= 75 Vdc)
= 75 Vdc, T
p
Figure 1. Recovery Time Equivalent Test Circuit
» t
(T
25°C
A
rr
0.8
= 25°C unless otherwise noted)
TYPICAL CHARACTERISTICS
0.1 mF
OSCILLOSCOPE
J
50 W INPUT
SAMPLING
= 150°C)
1.0
−55°C
http://onsemi.com
1.2
R(peak)
V
2
R
is equal to 10 mA.
t
1.2
1.0
0.8
0.6
0.4
0.2
r
INPUT SIGNAL
0
10%
90%
0
t
p
Symbol
10
V
C
V
(BR)
I
t
R
rr
F
D
t
20
V
R
Figure 3. Capacitance
, REVERSE VOLTAGE (V)
F
30
) of 10 mA.
I
I
Min
R
F
75
−
−
−
−
−
−
−
−
40
(I
F
= I
50
at i
R
OUTPUT PULSE
1000
1250
= 10 mA; MEASURED
1100
Max
R(REC)
900
5.0
2.0
3.0
80
t
−
rr
T
i
60
R(REC)
A
= 1.0 mA)
= 25°C
= 1.0 mA
70
t
nAdc
Unit
Vdc
mV
pF
ms
80