BT100-6 IK Semiconductor, BT100-6 Datasheet - Page 2
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BT100-6
Manufacturer Part Number
BT100-6
Description
Sensitive Gate Silicon Controlled Rectifiers
Manufacturer
IK Semiconductor
Datasheet
1.BT100-6.pdf
(5 pages)
Electrical Characteristics
※ Notes :
1. Pulse Width ≤1.0ms, Duty cycle ≤1%
2. Does not include R
Symbol
dv/dt
R
R
di/dt
I
V
V
V
I
DRM
I
th(j-c)
th(j-a)
GT
TM
GT
GD
H
Repetitive Peak Off-
State Current
Peak On-State
Voltage(1)
Gate Trigger
Current(2)
Gate Trigger
Voltage(2)
Non-Trigger Gate
Voltage(1)
Critical Rate of Rise
Off-State Voltage
Critical Rate of Rise
Off-State Voltage
Holding Current
Thermal
Thermal
GK
in measurement.
Items
Impedance
Impedance
V
(I
V
VD=7V, RL=100Ω
V
V
form R
I
lgt=20mA
V
Initiating Current=20mA T
Junction to case
Junction to Ambient
PK
TM
AK
AK
AK
D
AK
=20A ;
=Rated V
=V
=1A, Peak)
=6V, R
=12V, R
=12V, Gate Open
DRM,
GK
=1000Ω T
L
=100Ω
L
Conditions
DRM
or V
=100Ω
P
W
, Exponential wave-
=10㎲;di
RRM:
J
=125℃
R
GK
=1000Ω
G
T
/dt=1A/㎲
T
T
T
T
T
c
c
c
T
=125℃
c
c
=-40℃
=-40℃
=25℃
=25℃
T
c
c
=25℃
c
=125℃
=-40℃
c
=25℃
━
━
━
━
━
━
━
━
Min
500
0.2
━
━
━
━
Ratings
Typ
━
━
━
━
━
━
2
━
800
1.2
━
━
━
━
10
200
200
500
0.8
1.2
5.0
10
Max
150
1.7
━
━
50
60
BT100-6
℃/W
℃/W
V/㎲
A/㎲
Unit
mA
㎂
㎂
V
V
V
2