BT168 Philips Semiconductors, BT168 Datasheet - Page 2

• Manufacturer Part Number: BT168
• Description: Thyristors logic level for RCD/ GFI/ LCCB applications
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
September 1997
Thyristors
logic level for RCD/ GFI/ LCCB Applications
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-lead
th j-a
, I
D
R
/dt
Thermal resistance
junction to lead
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
pcb mounted; lead length = 4mm
CONDITIONS
V
V
V
I
V
V
gate open circuit
V
R
CONDITIONS
V
exponential waveform; R
I
dI
V
I
dV
T
TM
TM
D
D
D
D
D
D
DM
D
GK
G
= 1 A
D
/dt = 0.1 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 2 A; V
= 67% V
= 1.6 A; V
/dt = 2 V/ s; R
= 1 k
= 67% V
DRM(max)
DRM(max)
D
T
GT
GT
T
DRM(max)
DRM(max)
= V
= 10 mA; gate open circuit
= 10 mA; gate open circuit
; I
; V
R
= 0.5 mA; R
= 0.5 mA; R
= 35 V; dI
T
R
2
= 10 mA; T
DRM(max)
= V
; T
GK
; T
= 1 k
RRM(max)
j
= 125 ˚C;
j
; I
= 125 ˚C;
TM
G
GK
GK
GK
= 10 mA;
/dt = 30 A/ s;
j
; T
= 1 k
= 125 ˚C;
= 1 k
= 1 k
j
= 125 ˚C;
MIN.
MIN.
MIN.
0.2
20
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
0.05
150
100
1.2
0.5
0.3
50
25
2
2
2
-
Product specification
BT168 series
MAX.
MAX.
MAX.
1.35
200
0.8
0.1
60
6
5
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
V/ s
K/W
K/W
mA
mA
mA
V
V
V
A
s
s