BT258 Philips Semiconductors, BT258 Datasheet

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BT258

Manufacturer Part Number
BT258
Description
Thyristors logic level
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
switching
applications. These devices are
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.
October 1997
Thyristors
logic level
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
PIN
t
stg
j
DRM
GM
RGM
GM
G(AV)
tab
T
1
2
3
/dt
, V
RRM
cathode
anode
gate
anode
and
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
logic
phase
integrated
control
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
I
RRM
T(AV)
T(RMS)
TSM
G
DRM
/dt = 50 mA/ s
= 10 A; I
,
G
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
tab
= 50 mA;
1
1 2 3
mb
j
= 25 ˚C prior to
111 ˚C
BT258-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
-500R -600R -800R
500
a
MAX. MAX. MAX. UNIT
500R
500
75
5
8
1
MAX.
Product specification
600
125
150
0.5
75
82
28
50
600R
5
8
2
5
5
5
600
BT258 series
75
5
8
1
2
g
800
800R
800
75
5
8
Rev 1.200
UNIT
k
A/ s
A
˚C
˚C
W
W
V
A
A
A
A
A
V
V
2
V
A
A
A
s

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BT258 Summary of contents

Page 1

... ˚C prior to j surge over any 20 ms period 1 Product specification BT258 series MAX. MAX. MAX. UNIT BT258- 500R 600R 800R 500 600 800 ...

Page 2

... mA DRM(max / 125 ˚C; D DRM(max / / Product specification BT258 series MIN. TYP. MAX. UNIT - - 2.0 K K/W MIN. TYP. MAX. UNIT - 50 200 1.3 1.5 ...

Page 3

... C 1.4 1.2 1 0.8 0.6 0.4 100 150 -50 , T(RMS Product specification BT258 series BT258 I TSM I T time T Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT150 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT258 series BT150+ typ max 0 BT150 0.1ms 1ms 10ms 0. versus th j-mb pulse width RGK = 100 ohms ...

Page 5

... Dimensions in mm Net Mass 3,0 max not tinned max (2x) Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. TO220AB; pin 2 connected to mounting base. 5 Product specification BT258 series 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.200 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Product specification BT258 series Rev 1.200 ...

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