Z0409DF ST Microelectronics, Z0409DF Datasheet - Page 4

• Manufacturer Part Number: Z0409DF
• Description: 4A Triacs
• Manufacturer: ST Microelectronics

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Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
7
6
5
4
3
2
1
0
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 5:
number of cycles.
25
20
15
10
1E+0
0.0
1E-1
1E-2
1E-3
5
0
P(W)
1
ITSM(A)
1E-3
K=[Zth(j-a)/Rth(j-a)]
0.5
Tamb=25°C
Repetitive
1E-2
Surge peak on-state current versus
1.0
Non repetitive
Tj initial=25°C
10
Number of cycles
1.5
1E-1
IT(RMS)(A)
tp(s)
2.0
1E+0
2.5
100
1E+1
3.0
t=20ms
One cycle
1E+2 5E+2
3.5
1000
4.0
500
100
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 2: RMS on-state current versus ambient
temperature (full cycle).
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
10
1
0.01
-40
0
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IT(RMS)(A)
ITSM (A), I²t (A²s)
IH & IL
Rth(j-a)=Rth(j-l)
-20
IGT
dI/dt limitation:
20A/µs
25
0
Rth(j-a)=100°C/W
0.10
20
Tamb(°C)
50
40
tp (ms)
Tj(°C)
60
75
1.00
80
100
100
Tj initial=25°C
ITSM
I²t
120
10.00
125
140