C106 ON Semiconductor, C106 Datasheet - Page 2

• Manufacturer Part Number: C106
• Description: Sensitive Gate Silicon Controlled Rectifiers
• Manufacturer: ON Semiconductor

3. Pulse Test: Pulse Width
4. R
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On–State Voltage (Note 3)
Gate Trigger Current (Continuous dc) (Note 4)
Peak Reverse Gate Voltage (I
Gate Trigger Voltage (Continuous dc) (Note 4)
Gate Non–Trigger Voltage (Continuous dc) (Note 4)
Latching Current
Holding Current (V
Critical Rate–of–Rise of Off–State Voltage
(V
(I
(V
(V
(V
(V
(Initiating Current = 20 mA, Gate Open)
(V
T
GK
TM
J
AK
AK
AK
AK
AK
AK
= 110 C)
is not included in measurement.
= 4 A)
= Rated V
= 6 Vdc, R
= 6 Vdc, R
= 12 V, R
= 12 V, I
= Rated V
G
L
DRM
DRM
= 20 mA)
L
L
= 100 Ohms, T
D
= 100 Ohms)
= 100 Ohms)
= 12 Vdc)
, Exponential Waveform, R
or V
RRM
2.0 ms, Duty Cycle
Characteristic
GR
, R
= 10 A)
J
GK
Characteristic
= 110 C)
(T
= 1000 Ohms)
C
(T
= 25 C unless otherwise noted.)
C
= 25 C unless otherwise noted.)
GK
2%.
= 1000 Ohms,
http://onsemi.com
C106 Series
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
= 25 C
= 110 C
= 25 C
= –40 C
= 25 C
= –40 C
= 25 C
= –40 C
= 25 C
= –40 C
= +110 C
2
I
DRM
Symbol
V
dv/dt
V
V
V
I
GRM
GT
I
I
, I
TM
GT
GD
H
L
RRM
Symbol
R
R
T
JC
L
JA
Min
0.4
0.5
0.2
–
–
–
–
–
–
–
–
–
–
–
–
Max
0.60
0.75
0.20
0.35
0.19
0.33
0.07
260
Typ
3.0
8.0
75
15
35
–
–
–
–
–
Max
100
200
500
2.2
6.0
0.8
1.0
5.0
7.0
3.0
6.0
2.0
10
–
–
Unit
C/W
C/W
C
Volts
Volts
Volts
Volts
Unit
V/ s
mA
mA
A
A
A