Si8800EDB Vishay Siliconix, Si8800EDB Datasheet

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Si8800EDB

Manufacturer Part Number
Si8800EDB
Description
N-Channel 20 V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si8800EDB-T2-E1
Manufacturer:
VISHAY
Quantity:
300
Part Number:
Si8800EDB-T2-E1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si8800EDB-T2-E1
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
PRODUCT SUMMARY
V
DS
20
(V)
Device Marking: 800
Bump Side View
S
S
2
3
0.080 at V
0.090 at V
0.105 at V
0.150 at V
R
G
D
MICRO FOOT
DS(on)
xxx = Date/Lot Traceability Code
1
4
GS
GS
GS
GS
J
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
= 1.5 V
= 150 °C)
a, d
b, e
Backside View
N-Channel 20 V (D-S) MOSFET
I
D
2.8
2.6
2.4
2.0
(A)
a
c
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
A
A
A
A
A
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
3.2 nC
g
(Typ.)
Symbol
R
thJA
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Ultra Small 0.8 mm x 0.8 mm Outline
• Ultra Thin 0.357 mm Height
• Typical ESD Protection 1500 V
• Portable Devices such as Cell Phones,
Definition
Compliant to RoHS Directive 2002/95/EC
Smart Phones and MP3 Players
- Load Switch
- Small Signal Switch
Typical
105
200
®
Power MOSFET
- 55 to 150
Limit
2.8
2.2
2.0
1.6
0.7
0.4
0.9
0.6
0.5
0.3
260
± 8
20
15
a
a
b
b
a
b
a
a
b
b
Maximum
G
135
260
Vishay Siliconix
Si8800EDB
www.DataSheet4U.com
R
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
D
S
1

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Si8800EDB Summary of contents

Page 1

... Device Marking: 800 xxx = Date/Lot Traceability Code Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si8800EDB Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...

Page 3

... 2.0 2.5 3 Si8800EDB www.DataSheet4U.com Vishay Siliconix T = 150 ° ° Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage ° 125 ° °C C 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) ...

Page 4

... Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.4 1.3 1.2 1 1.0 0.9 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0. 0. ° 0. 0 ° 0. Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 5

... DS(on) Safe Operating Area, Junction-to-Ambient 0.8 0.6 0.4 0.2 0.0 100 125 150 25 = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper Si8800EDB www.DataSheet4U.com Vishay Siliconix 100 μ 100 ms 100 is specified 50 75 100 125 T - Ambient Temperature (°C) ...

Page 6

... Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper) www ...

Page 7

... Note 4 Solder Mask ~ Ø 0.215 Millimeters Nom. Max. 0.357 0.400 0.157 0.187 0.200 0.213 0.175 0.185 0.400 0.200 0.220 0.800 0.840 Si8800EDB www.DataSheet4U.com Vishay Siliconix Inches Min. Nom. Max. 0.0124 0.0141 0.0157 0.0050 0.0062 0.0074 0.0074 ...

Page 8

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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