BAT51E Advanced Semiconductor, Inc., BAT51E Datasheet
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BAT51E
Manufacturer Part Number
BAT51E
Description
Microwave Mixer Diode
Manufacturer
Advanced Semiconductor, Inc.
Datasheet
1.BAT51E.pdf
(1 pages)
CHARACTERISTICS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
DESCRIPTION:
The
Microwave Mixer Diode Designed for
low noise performance in Applications
Operating from 12 to 18 GHz.
FEATURES:
•
•
•
•
MAXIMUM RATINGS
T
T
SYMBOL
AMB
STG
Low Noise Fugure
Available in reverse polarity by
adding suffix R
Available in forward matched pairs
by adding suffix MR
Available in reverse matched pairs
by adding suffix RM
ASI BAT51E
N
Z
L
I
I
R
F
IF
O
C
N
-55 °C to +100 °C
-55 °C to +100 °C
V
V
IF
R
F
= 100 Ω
= 0.5 V
= 0.5 V
is a Silicon
T
MICROWAVE MIXER DIODE
C
= 25
TEST CONDITIONS
O
C
Specifications are subject to change without notice.
f = 13.5 GHz
PACKAGE STYLE DO- 37
MINIMUM TYPICAL
250
2.0
350
7.0
5.2
NONE
MAXIM
450
2.0
BAT51E
UNITS
mA
µA
dB
dB
REV. A
Ω
1/1