S2006FS221V Teccor Electronics, Inc., S2006FS221V Datasheet - Page 32

• Manufacturer Part Number: S2006FS221V
• Description: Thyristor Product Catalog
• Manufacturer: Teccor Electronics, Inc.

Triacs
Specific Test Conditions
di/dt — Maximum rate-of-change of on-state current; I
dv/dt — Critical rate-of-rise of off-state voltage at rated V
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V
I
I
I
I
I
I
I
P
P
t
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[phone]
2
DRM
GT
GTM
H
T(RMS)
TSM
gt
G(AV)
GM
I
t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
(4) (16)
T(RMS)
— Holding current (DC); gate open
10 A
15 A
25 A
35 A
MAX
— Gate controlled turn-on time; I
— DC gate trigger current in specific operating quadrants;
and I
unenergized
for fusing
V
— Peak one-cycle surge
— Peak gate power dissipation;
— Peak gate trigger current
0.1
— Peak off-state current, gate open; V
D
— Average gate power dissipation
= 12 V dc
— RMS on-state current conduction angle of 360°
µ
T(RMS)
s rise time
MT1
Q6025P5
Q8025P5
Q6035P5
Q8035P5
Fastpak
Gate
TO-3
commutating di/dt = 0.54 rated I
MT2
Isolated
MT1
QK010L4
QK010L5
QK015L5
Q2010L4
Q4010L4
Q6010L4
Q8010L4
Q2010L5
Q4010L5
Q6010L5
Q8010L5
Q2015L5
Q4015L5
Q6015L5
Q8015L5
TO-220
See “Package Dimensions” section for variations. (11)
MT2
T
GT
I
GT
= 200 mA with 0.1
Part Number
Q2010F51
Q4010F51
Q6010F51
I
GTM
MT1
TO-202
DRM
MT2
MT2
T(RMS)
= maximum rated value
G
/ms; gate
GT
Non-isolated
= 200 mA with
QK010R4
QK010R5
QK015R5
QK025R5
DRM
Q2010R4
Q4010R4
Q6010R4
Q8010R4
Q2010R5
Q4010R5
Q6010R5
Q8010R5
Q2015R5
Q4015R5
Q6015R5
Q8015R5
Q2025R5
Q4025R5
Q6025R5
Q8025R5
µ
MT1
TO-220
s rise time
MT2
MT2
gate open
G
DRM
MT2
E2 - 4
QK010N4
QK010N5
QK015N5
QK025N5
Q2010N4
Q4010N4
Q6010N4
Q8010N4
Q2010N5
Q4010N5
Q6010N5
Q8010N5
Q2015N5
Q4015N5
Q6015N5
Q8015N5
Q2025N5
Q4025N5
Q6025N5
Q8025N5
TO-263
D
2
Pak
V
V
V
General Notes
•
•
•
•
•
MT1
DRM
GT
TM
MT2
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 C unless specified otherwise.
Operating temperature range (T
-25 °C to +125 °C for Fastpak, and -40 C to +125 C for all other
devices.
Storage temperature range (T
-40 C to +150 C for TO-202, and -40 C to +125 C for all other
devices.
Lead solder temperature is a maximum of 230 C for 10 seconds,
maximum; 1/16" (1.59 mm) from case.
The case temperature (T
sional outline drawings. See “Package Dimensions” section of this
catalog.
— DC gate trigger voltage; V
— Peak on-state voltage at maximum rated RMS current
G
— Repetitive peak blocking voltage
V
1000
1000
1000
1000
Volts
MIN
200
400
600
800
200
400
600
800
200
400
600
800
200
400
600
800
600
800
600
800
DRM
(1)
QI
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
QII
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
MAX
(3) (7) (15)
C
mAmps
) is measured as shown on the dimen-
QIII
I
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
GT
D
S
) is -65 C to +150 C for TO-92,
= 12 V dc; R
J
) is -65 C to +125 C for TO-92,
QIV
50
50
50
50
50
TYP
QIV
120
120
120
120
75
75
75
75
75
©2002 Teccor Electronics
Thyristor Product Catalog
L
25 °C
= 60
T
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
C
=
mAmps
(1) (16)
100 °C
I
T
MAX
DRM
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Data Sheets
C
1
1
1
1
3
3
1
3
1
1
1
1
3
=
125 °C
T
C
2
2
2
2
2
2
2
3
3
3
3
3
5
5
5
5
=