IRF1104 International Rectifier, IRF1104 Datasheet - Page 4
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IRF1104
Manufacturer Part Number
IRF1104
Description
Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Manufacturer
International Rectifier
Datasheet
1.IRF1104.pdf
(8 pages)
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IRF1104
1000
100
4
0.1
10
5000
4000
3000
2000
1000
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0
T = 175 C
J
1
Drain-to-Source Voltage
V
SD
°
V
0.8
DS
,Source-to-Drain Voltage (V)
Forward Voltage
T = 25 C
V
C
C
C
J
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
°
0V,
C
C
C
gs
gd
ds
1.4
C iss
C rss
+ C
+ C
C oss
10
f = 1MHz
gd ,
gd
C
2.0
ds
V
GS
SHORTED
= 0 V
2.6
100
10000
1000
100
Fig 8. Maximum Safe Operating Area
10
20
15
10
1
5
0
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
60A
V
DS
°
Q , Total Gate Charge (nC)
°
G
25
, Drain-to-Source Voltage (V)
BY R
50
10
DS(on)
V
V
FOR TEST CIRCUIT
DS
DS
SEE FIGURE
www.irf.com
= 32V
= 20V
75
10us
100us
1ms
10ms
13
100
100