IRF3007 International Rectifier, IRF3007 Datasheet
IRF3007
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IRF3007 Summary of contents
Page 1
... Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com AUTOMOTIVE MOSFET G @ 10V (Silicon limited 10V (See Fig. 10V (Package limited) GS Typ. 0.50 IRF3007 ® HEXFET Power MOSFET 75V DSS R = 0.0126 DS(on 75A D S TO-220AB Max. Units ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 100 BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...
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0V, C iss = SHORTED 5000 C rss = oss = 4000 Ciss 3000 2000 1000 Coss Crss 0 1 ...
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LIMITED BY PACKAGE 100 T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 ...
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D.U 20V 0.01 Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...
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Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 300 T OP Single Pulse BOTT OM 50% Duty Cycle 48A 200 100 0 25 ...
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D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery ...
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Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...