IRF3710xPbF International Rectifier, IRF3710xPbF Datasheet - Page 4

• Manufacturer Part Number: IRF3710xPbF
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

100000
1000.00
10000
4
100.00
1000
10.00
100
1.00
0.10
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
0.5
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T J = 25°C
10
1.0
Coss
Ciss
Crss
f = 1 MHZ
1.5
V GS = 0V
SHORTED
2.0
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
12
10
1
7
5
2
0
0
1
Fig 6. Typical Gate Charge Vs.
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
=
28A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
40
V
V
V
DS
DS
DS
60
= 80V
= 50V
= 20V
100
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100µsec
10msec
1msec
80
1000
100